VCES = 1200V IC nom = 400A / ICRM = 800A 典型應用 TypicalApplications ? 電機傳動 ? Motordrives 電氣特性 ElectricalFeatures ? 低開關損耗 ? Lowswitchinglosses ? Tvjop=150°C ? Tvjop=150°C 機械特性 MechanicalFeatures ? 銅基板 ? Copperbaseplate ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode Digit ModuleSerialNumber 1-5 ModuleMaterialNumber 6-11 ProductionOrderNumber 12-19 Datecode(ProductionYear) 20-21 Datecode(ProductionWeek) 22-232 技術信息/TechnicalInformation 2A400HB12C2F IGBT-模塊 IGBT-Module preparedby:CU approvedby:MK dateofpublication:2016-09-30 revision:V3.0 IGBT,逆變器/IGBT,Inverter 最大額定值/MaximumRatedValues 集電極－發射極電壓 Collector-emittervoltage Tvj = 25°C VCES 1200 V 連續集電極直流電流 ContinuousDCcollectorcurrent TC = 90°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 400 565 A A 集電極重復峰值電流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A 總功率損耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 2100 W 柵極－發射極峰值電壓 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues min. typ. max. 集電極－發射極飽和電壓 Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V VCE sat 1,85 2,20 2,30 2,25 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C 柵極閾值電壓 Gatethresholdvoltage IC = 13,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V 柵極電荷 Gatecharge VGE = -15 V ... +15 V QG 2,80 μC 內部柵極電阻 Internalgateresistor Tvj = 25°C RGint 1,8 ? 輸入電容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 22,0 nF 反向傳輸電容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,94 nF 集電極-發射極截止電流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 柵極-發射極漏電流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA 開通延遲時間(電感負載) Turn-ondelaytime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 0,62 ? td on 0,14 0,15 0,15 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升時間(電感負載) Risetime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 0,62 ? tr 0,04 0,04 0,05 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 關斷延遲時間(電感負載) Turn-offdelaytime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGoff = 0,62 ? td off 0,36 0,43 0,46 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降時間(電感負載) Falltime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGoff = 0,62 ? tf 0,05 0,09 0,09 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 開通損耗能量(每脈沖) Turn-onenergylossperpulse IC = 400 A, VCE = 600 V, LS = 25 nH VGE = ±15 V, di/dt = 9500 A/μs (Tvj = 150°C) RGon = 0,62 ? Eon 13,0 24,5 29,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 關斷損耗能量(每脈沖） Turn-offenergylossperpulse IC = 400 A, VCE = 600 V, LS = 25 nH VGE = ±15 V, du/dt = 3600 V/μs (Tvj = 150°C) RGoff = 0,62 ? Eoff 27,5 40,5 45,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 短路數據 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC tP ≤ 10 μs, Tvj = 150°C 1500 A 結－外殼熱阻 Thermalresistance,junctiontocase 每個IGBT/perIGBT RthJC 0,0720 K/W 外殼－散熱器熱阻 Thermalresistance,casetoheatsink 每個IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,0630 K/W 在開關狀態下溫度 Temperatureunderswitchingconditions Tvj op -40 150 °C3 技術信息/TechnicalInformation 2A400HB12C2F IGBT-模塊 IGBT-Module preparedby:CU approvedby:MK dateofpublication:2016-09-30 revision:V3.0 二極管,逆變器/Diode,Inverter 最大額定值/MaximumRatedValues 反向重復峰值電壓 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 連續正向直流電流 ContinuousDCforwardcurrent IF 400 A 正向重復峰值電流 Repetitivepeakforwardcurrent tP = 1 ms IFRM 800 A I2t-值 I2t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C I2t 27000 24500 A2s A2s 特征值/CharacteristicValues min. typ. max. 正向電壓 Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V VF 1,65 1,65 1,65 2,10 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢復峰值電流 Peakreverserecoverycurrent IF = 400 A, - diF/dt = 9500 A/μs (Tvj=150°C) VR = 600 V VGE = -15 V IRM 445 535 555 A A A Tvj = 25°C Tvj = 125°C Tvj = 150°C 恢復電荷 Recoveredcharge IF = 400 A, - diF/dt = 9500 A/μs (Tvj=150°C) VR = 600 V VGE = -15 V Qr 43,0 77,0 88,0 μC μC μC Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢復損耗（每脈沖） Reverserecoveryenergy IF = 400 A, - diF/dt = 9500 A/μs (Tvj=150°C) VR = 600 V VGE = -15 V Erec 21,5 36,5 41,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 結－外殼熱阻 Thermalresistance,junctiontocase 每個二極管/perdiode RthJC 0,103 K/W 外殼－散熱器熱阻 Thermalresistance,casetoheatsink 每個二極管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,0740 K/W 在開關狀態下溫度 Temperatureunderswitchingconditions Tvj op -40 150 °C4 技術信息/TechnicalInformation 2A400HB12C2F IGBT-模塊 IGBT-Module preparedby:CU approvedby:MK dateofpublication:2016-09-30 revision:V3.0 模塊/Module 絕緣測試電壓 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV 模塊基板材料 Materialofmodulebaseplate Cu 內部絕緣 Internalisolation 基本絕緣(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬電距離 Creepagedistance 端子至散熱器/terminaltoheatsink 端子至端子/terminaltoterminal 29,0 23,0 mm 電氣間隙 Clearance 端子至散熱器/terminaltoheatsink 端子至端子/terminaltoterminal 23,0 11,0 mm 相對電痕指數 Comperativetrackingindex CTI > 200 min. typ. max. 雜散電感,模塊 Strayinductancemodule LsCE 20 nH 模塊引線電阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每個開關/perswitch RCC'+EE' 0,70 m? 儲存溫度 Storagetemperature Tstg -40 125 °C 模塊安裝的安裝扭距 Mountingtorqueformodulmounting 螺絲M6根據相應的應用手冊進行安裝 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 6,00 Nm 端子聯接扭距 Terminalconnectiontorque 螺絲M6根據相應的應用手冊進行安裝 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm 重量 Weight G 285 g

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