武漢科琪供應英飛凌2A200HB12C2F-工業電器網

武漢科琪供應英飛凌2A200HB12C2F

日期：2023-04-24 09:41:50

VCES = 1200V IC nom = 200A / ICRM = 400A 典型應用 TypicalApplications ? 電機傳動 ? Motordrives 電氣特性 ElectricalFeatures ? 低開關損耗 ? Lowswitchinglosses ? Tvjop=150°C ? Tvjop=150°C 機械特性 MechanicalFeatures ? 銅基板 ? Copperbaseplate ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode Digit ModuleSerialNumber 1-5 ModuleMaterialNumber 6-11 ProductionOrderNumber 12-19 Datecode(ProductionYear) 20-21 Datecode(ProductionWeek) 22-232 技術信息/TechnicalInformation 2A200HB12C2F IGBT-模塊 IGBT-Module preparedby:CU approvedby:MK dateofpublication:2016-09-30 revision:V3.0 IGBT,逆變器/IGBT,Inverter 最大額定值/MaximumRatedValues 集電極－發射極電壓 Collector-emittervoltage Tvj = 25°C VCES 1200 V 連續集電極直流電流 ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 200 294 A A 集電極重復峰值電流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A 總功率損耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 1100 W 柵極－發射極峰值電壓 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues min. typ. max. 集電極－發射極飽和電壓 Collector-emittersaturationvoltage IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V VCE sat 1,85 2,20 2,30 2,25 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C 柵極閾值電壓 Gatethresholdvoltage IC = 6,60 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V 柵極電荷 Gatecharge VGE = -15 V ... +15 V QG 1,40 μC 內部柵極電阻 Internalgateresistor Tvj = 25°C RGint 3,7 ? 輸入電容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 11,0 nF 反向傳輸電容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,47 nF 集電極-發射極截止電流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 柵極-發射極漏電流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA 開通延遲時間(電感負載) Turn-ondelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 0,62 ? td on 0,13 0,13 0,14 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升時間(電感負載) Risetime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 0,62 ? tr 0,03 0,03 0,04 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 關斷延遲時間(電感負載) Turn-offdelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 0,62 ? td off 0,30 0,38 0,40 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降時間(電感負載) Falltime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 0,62 ? tf 0,05 0,07 0,08 μs μs μs Tvj = 25°C Tvj = 125°C Tvj = 150°C 開通損耗能量(每脈沖) Turn-onenergylossperpulse IC = 200 A, VCE = 600 V, LS = 25 nH VGE = ±15 V, di/dt = 5400 A/μs (Tvj = 150°C) RGon = 0,62 ? Eon 13,5 22,5 25,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 關斷損耗能量(每脈沖） Turn-offenergylossperpulse IC = 200 A, VCE = 600 V, LS = 25 nH VGE = ±15 V, du/dt = 3600 V/μs (Tvj = 150°C) RGoff = 0,62 ? Eoff 12,5 20,0 22,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 短路數據 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC tP ≤ 10 μs, Tvj = 150°C 700 A 結－外殼熱阻 Thermalresistance,junctiontocase 每個IGBT/perIGBT RthJC 0,134 K/W 外殼－散熱器熱阻 Thermalresistance,casetoheatsink 每個IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,100 K/W 在開關狀態下溫度 Temperatureunderswitchingconditions Tvj op -40 150 °C3 技術信息/TechnicalInformation 2A200HB12C2F IGBT-模塊 IGBT-Module preparedby:CU approvedby:MK dateofpublication:2016-09-30 revision:V3.0 二極管,逆變器/Diode,Inverter 最大額定值/MaximumRatedValues 反向重復峰值電壓 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 連續正向直流電流 ContinuousDCforwardcurrent IF 200 A 正向重復峰值電流 Repetitivepeakforwardcurrent tP = 1 ms IFRM 400 A I2t-值 I2t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C I2t 6400 5850 A2s A2s 特征值/CharacteristicValues min. typ. max. 正向電壓 Forwardvoltage IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V VF 1,65 1,65 1,65 2,10 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢復峰值電流 Peakreverserecoverycurrent IF = 200 A, - diF/dt = 5400 A/μs (Tvj=150°C) VR = 600 V VGE = -15 V IRM 190 200 205 A A A Tvj = 25°C Tvj = 125°C Tvj = 150°C 恢復電荷 Recoveredcharge IF = 200 A, - diF/dt = 5400 A/μs (Tvj=150°C) VR = 600 V VGE = -15 V Qr 19,5 36,5 42,5 μC μC μC Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢復損耗（每脈沖） Reverserecoveryenergy IF = 200 A, - diF/dt = 5400 A/μs (Tvj=150°C) VR = 600 V VGE = -15 V Erec 8,00 14,5 16,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 結－外殼熱阻 Thermalresistance,junctiontocase 每個二極管/perdiode RthJC 0,203 K/W 外殼－散熱器熱阻 Thermalresistance,casetoheatsink 每個二極管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,133 K/W 在開關狀態下溫度 Temperatureunderswitchingconditions Tvj op -40 150 °C

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